M25PX64 Datasheet, PDF (59/66 Pages) Numonyx B.V – 64-Mbit, dual I/O, 4-Kbyte subsector erase, serial flash memory with 75 MHz SPI bus interface

M25PX64
DC and AC parameters
Table 17.
AC characteristics⁽¹⁾ (continued)
Test conditions specified in Table 13 and Table 14
Symbol Alt.
Parameter
Min
Typ⁽²⁾
Max Unit
t_W
t_PP(8)
Write status register cycle time
Page program cycle time (256 bytes)
Page program cycle time (n bytes)
Program OTP cycle time (64 bytes)
1.3
15 ms
0.8
ms
int(n/8) × 0.025⁽⁹⁾ 5
0.2
ms
t_SSE
Subsector erase cycle time
t_SE
Sector erase cycle time
Bulk erase cycle time
t_BE
Bulk erase cycle time (V_PP = V_PPH)
70
150 ms
0.7
3
s
68
160 s
35
1. Preliminary data.
2. Typical values given for T_A = 25° C.
3. t_CH + t_CL must be greater than or equal to 1/ f_C.
4. Value guaranteed by characterization, not 100% tested in production.
5. Expressed as a slew-rate.
6. Only applicable as a constraint for a WRSR instruction when SRWD is set to ‘1’.
7. V_PPH should be kept at a valid level until the program or erase operation has completed and its result
(success or failure) is known.
8. When using the page program (PP) instruction to program consecutive bytes, optimized timings are
obtained with one sequence including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤
256).
9. int(A) corresponds to the upper integer part of A. For example int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
Figure 30. Serial input timing
S
tCHSL
C
tDVCH
DQ0
tSLCH
tCHDX
MSB IN
tSHSL
tCHSH
tSHCH
tCLCH
LSB IN
tCHCL
DQ1
High Impedance
AI13728
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