NAND512R3A2C Datasheet, PDF (1/51 Pages) STMicroelectronics – 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

NAND512R3A2C NAND512R4A2C
NAND512W3A2C NAND512W4A2C
512 Mbit, 528 byte/264 word page,
1.8 V/3 V, NAND Flash memories
Features
● High density NAND Flash memories
– 512 Mbit memory array
– Cost effective solutions for mass
storage applications
● NAND interface
– x 8 or x 16 bus width
– Multiplexed Address/ Data
● Supply voltage: 1.8 V, 3.0 V
● Page size
– x 8 device: (512 + 16 spare) bytes
– x 16 device: (256 + 8 spare) words
● Block size
– x 8 device: (16 K + 512 spare) bytes
– x 16 device: (8 K + 256 spare) words
● Page Read/Program
– Random access:
12 µs (3 V)/15 µs (1.8 V) (max)
– Sequential access:
30 ns (3 V)/50 ns (1.8 V) (min)
– Page Program time: 200 µs (typ)
● Copy Back Program mode
● Fast Block Erase: 2 ms (typ)
● Status Register
● Electronic signature
● Chip Enable ‘don’t care’
● Serial Number option
Table 1.
Device summary
Reference
NAND512-A2C
1. x16 organization only available for MCP.
TSOP48 12 x 20 mm
FBGA
VFBGA55 8 x 10 x 1 mm
VFBGA63 9 x 11 x 1 mm
● Hardware Data Protection
– Program/Erase locked during Power
transitions
● Data integrity
– 100,000 Program/Erase cycles (with
ECC)
– 10 years Data Retention
● ECOPACK^® packages
● Development tools
– Error Correction Code models
– Bad Blocks Management and Wear
Leveling algorithms
– Hardware simulation models
Part number
NAND512R3A2C
NAND512R4A2C⁽¹⁾
NAND512W3A2C
NAND512W4A2C⁽¹⁾
January 2008
Rev 2
1/51
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