NAND04GW3B2B Datasheet, PDF (1/58 Pages) STMicroelectronics – 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories

NAND04GW3B2B
NAND08GW3B2A
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page
3V, NAND Flash Memories
Features
■ High density NAND Flash Memory
– up to 8 Gbit memory array
– Up to 256 Mbit spare area
– Cost effective solution for mass storage
applications
■ NAND Interface
– x8 bus width
– Multiplexed Address/ Data
■ Supply voltage
– 3.0V device: V_DD = 2.7 to 3.6V
■ Page size
– (2048 + 64 spare) Bytes
■ Block size
– (128K + 4K spare) Bytes
■ Page Read/Program
– Random access: 25µs (max)
– Sequential access: 30ns (min)
– Page program time: 200µs (typ)
■ Copy Back Program mode
– Fast page copy without external buffering
■ Cache Program and Cache Read modes
– Internal Cache Register to improve the
program and read throughputs
■ Fast Block Erase
– Block erase time: 2ms (typ)
■ Status Register
■ Electronic Signature
■ Chip Enable ‘don’t care’
– for simple interface with microcontroller
■ Serial Number option
TSOP48 12 x 20mm
■ Data protection
– Hardware and Software Block Locking
– Hardware Program/Erase locked during
Power transitions
■ Data integrity
– 100,000 Program/Erase cycles (with ECC)
– 10 years Data Retention
■ ECOPACK^® package
■ Development tools
– Error Correction Code software and
hardware models
– Bad Blocks Management and Wear
Leveling algorithms
– File System OS Native reference software
– Hardware simulation models
December 2007
Rev 5
1/58
www.numonyx.com
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