NAND01GW3A2B-KGD Datasheet, PDF (1/48 Pages) Numonyx B.V – Known Good Die, 1 Gbit (x 8/x 16), 528 Byte/264 word page, 3 V, NAND Flash memory

NAND01GW3A2B-KGD
NAND01GW4A2B-KGD
Known Good Die, 1 Gbit (x 8/x 16),
528 Byte/264 word page, 3 V, NAND Flash memory
Features
■ High density NAND Flash memory
– 1 Gbit memory array
– 32 Mbit spare area
– Cost effective solutions for mass storage
applications
■ NAND interface
– x 8 or x 16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
■ Supply voltage:
– 3.0 V device: V_DD = 2.7 to 3.6 V
■ Page size
– x 8 device: (512 + 16 spare) bytes
– x 16 device: (256 + 8 spare) words
■ Block size
– x 8 device: (16 K + 512 spare) bytes
– x 16 device: (8 K + 256 spare) words
■ Page Read / Program
– Random access: 15 µs (3 V) (max)
– Sequential access: 50 ns (min)
– Page program time: 200 µs (typ)
■ Copy Back Program mode
– Fast page copy without external buffering
■ Fast Block Erase
– Block erase time: 2 ms (typ)
■ Status Register
■ Electronic signature
■ Chip Enable ‘Don’t care’
– Simple interface with microcontroller
Wafer
■ Serial Number option
■ Hardware Data Protection
– Program/Erase locked during Power
transitions
■ Data Integrity
– 100,000 Program/Erase cycles (with ECC)
– 10 years Data Retention
January 2008
Rev 3
1/48
www.numonyx.com
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