NAND01G-B2B Datasheet, PDF (1/60 Pages) STMicroelectronics – 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

NAND01G-B2B
NAND02G-B2C
1-Gbit, 2-Gbit,
2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
Features
■ High density NAND flash memories
– Up to 2 Gbits of memory array
– Cost effective solutions for mass storage
applications
■ NAND interface
– x8 or x16 bus width
– Multiplexed address/ data
– Pinout compatibility for all densities
■ Supply voltage: 1.8 V/3.0 V
■ Page size
– x8 device: (2048 + 64 spare) bytes
– x16 device: (1024 + 32 spare) words
■ Block size
– x8 device: (128 K + 4 K spare) bytes
– x16 device: (64 K + 2 K spare) words
■ Page read/program
– Random access: 25 µs (max)
– Sequential access: 30 ns (min)
– Page program time: 200 µs (typ)
■ Copy back program mode
■ Cache program and cache read modes
■ Fast block erase: 2 ms (typ)
■ Status register
■ Electronic signature
■ Chip enable ‘don’t care’
Table 1.
Device summary
Reference
NAND01G-B2B
NAND02G-B2C
1. x16 organization only available for MCP products.
TSOP48 12 x 20 mm
FBGA
VFBGA63 9.5 x 12 x 1 mm
VFBGA63 9 x 11 x 1 mm
■ Serial number option
■ Data protection
– Hardware block locking
– Hardware program/erase locked during
power transitions
■ Data integrity
– 100 000 program/erase cycles per block
(with ECC)
– 10 years data retention
■ ECOPACK^® packages
■ Development tools
– Error correction code models
– Bad blocks management and wear leveling
algorithms
– Hardware simulation models
Part number
NAND01GR3B2B, NAND01GW3B2B
NAND01GR4B2B, NAND01GW4B2B⁽¹⁾
NAND02GR3B2C, NAND02GW3B2C
NAND02GR4B2C, NAND02GW4B2C⁽¹⁾
April 2008
Rev 5
1/60
www.numonyx.com
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