M58WT032KT Datasheet, PDF (1/117 Pages) Numonyx B.V – 32- and 64-Mbit (×16, multiple bank, burst) 1.8 V core, 3.0 V I/O supply Flash memories

M58WT032KT M58WT064KT
M58WT032KB M58WT064KB
32- and 64-Mbit (×16, multiple bank, burst)
1.8 V core, 3.0 V I/O supply Flash memories
Features
■ Supply voltage
– V_DD = 1.7 V to 2 V for program, erase and
read
– V_DDQ = 2.7 V to 3.3 V for I/O buffers
– V_PP = 9 V for fast program
■ Synchronous/asynchronous read
– Synchronous burst read mode: 52 MHz
– Asynchronous/synchronous page read
mode
– Random access times: 70 ns
■ Synchronous burst read suspend
■ Programming time
– 10 µs by word typical for fast factory
program
– Double/quadruple word program option
– Enhanced factory program options
■ Memory blocks
– Multiple bank memory array: 4 Mbit banks
– Parameter blocks (top or bottom location)
■ Dual operations
– Program erase in one bank while read in
others
– No delay between read and write
operations
■ Block locking
– All blocks locked at power-up
– Any combination of blocks can be locked
– WP for block lock-down
FBGA
TFBGA88 (ZAQ)
8 × 10 mm
■ Security
– 128-bit user programmable OTP cells
– 64-bit unique device number
■ Common Flash interface (CFI)
■ 100 000 program/erase cycles per block
■ Electronic signature
– Manufacturer code: 20h
– Device codes:
M58WT032KT (top): 8866h
M58WT032KB (bottom): 8867h
– M58WT064KT (top): 8810h
M58WT064KB (bottom): 8811h
■ ECOPACK® package available
March 2008
Rev 2
1/117
www.numonyx.com
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