M58WR064HT Datasheet, PDF (1/111 Pages) Numonyx B.V – 64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories

M58WR064HT
M58WR064HB
64 Mbit (4Mb x16, Multiple Bank, Burst)
1.8V supply Flash memories
Feature summary
■ Supply voltage
– V_DD = 1.7V to 2V for Program, Erase and
Read
– V_DDQ = 1.7V to 2.24V for I/O Buffers
– V_PP = 12V for fast Program (optional)
■ Synchronous / asynchronous read
– Synchronous Burst Read mode: 66MHz
– Asynchronous/ Synchronous Page Read
mode
– Random Access: 60ns, 70ns
■ Synchronous burst read suspend
■ Programming time
– 8µs by Word typical for Fast Factory
Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
■ Memory blocks
– Multiple Bank Memory Array: 4 Mbit Banks
– Parameter Blocks (Top or Bottom location)
■ Dual operations
– Program Erase in one Bank while Read in
others
– No delay between Read and Write
operations
■ Block locking
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
■ Security
– 128 bit user programmable OTP cells
– 64 bit unique device number
■ Common Flash Interface (CFI)
■ 100,000 program/erase cycles per block
FBGA
VFBGA56 (ZB)
7.7 x 9 mm
■ Electronic signature
– Manufacturer Code: 20h
– Device Codes:
M58WR064HT (Top): 8810h
M58WR064HB (Bottom): 8811h
■ Package
– ECOPACK®
November 2007
Rev 3
1/111
www.numonyx.com
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