M58LR128HC Datasheet, PDF (1/114 Pages) Numonyx B.V – 128 Mbit (x16, Mux I/O, Multiple Bank, Multilevel interface, Burst)

M58LR128HC
M58LR128HD
128 Mbit (x16, Mux I/O, Multiple Bank, Multilevel interface,
Burst)
Features
■ Supply voltage
– V_DD = 1.7 V to 2.0 V for program, erase and
read
– V_DDQ = 1.7 V to 2.0 V for I/O Buffers
– V_PP = 9 V for fast program
■ Multiplexed address/data
■ Synchronous / Asynchronous Read
– Synchronous Burst Read mode: 66 MHz
– Random Access: 70 ns
■ Synchronous Burst Read Suspend
■ Programming time
– 2.5 µs typical Word program time using
Buffer Enhanced Factory Program
command
■ Memory organization
– Multiple Bank memory array: 8 Mbit Banks
– Parameter Blocks (top or bottom location)
■ Dual operations
– program/erase in one Bank while read in
others
– No delay between read and write
operations
■ Block locking
– All blocks locked at power-up
– Any combination of blocks can be locked
with zero latency
– WP for Block Lock-Down
– Absolute Write Protection with V_PP = V_SS
1.8 V supply Flash memories
FBGA
VFBGA44 (ZB) 7.7 × 9 mm
■ Security
– 64 bit unique device number
– 2112 bit user programmable OTP Cells
■ Common Flash Interface (CFI)
■ 100 000 program/erase cycles per block
■ Electronic signature
– Manufacturer Code: 20h
– Top Device Codes:
M58LR128HC: 882Eh
– Bottom Device Codes
M58LR128HD: 882Fh
■ VFBGA44 package
– ECOPACK® compliant
November 2007
Rev 2
1/114
www.numonyx.com
1