M58BW16F Datasheet, PDF (1/87 Pages) STMicroelectronics – 16 or 32 Mbit (x32, Boot Block, Burst) 3.3V supply Flash memories

M58BW16F
M58BW32F
16 or 32 Mbit (x 32, boot block, burst)
3.3 V supply Flash memories
Preliminary Data
Features
■ Supply voltage
– V_DD = 2.7 V to 3.6 V (45 ns) or
V_DD = 2.5 V to 3.3 V (55 ns)
– V_DDQ = V_DDQIN = 2.4 V to 3.6 V for I/O
buffers
■ High performance
– Access times: 45 and 55 ns
– Synchronous burst reads
– 75 MHz effective zero wait-state burst read
– Asynchronous page reads
■ M58BW32F memory organization:
– Eight 64 Kbit small parameter blocks
– Four 128 Kbit large parameter blocks
– Sixty-two 512 Kbit main blocks
■ M58BW16F memory organization:
– Eight 64 Kbit parameter blocks
– Thirty-one 512 Kbit main blocks
■ Hardware block protection
– WP pin to protect any block combination
from Program and Erase operations
– PEN signal for Program/Erase Enable
■ Irreversible modify protection (OTP like) on
128 Kbits:
– Block 1 (bottom device) or block 72 (top
device) in the M58BW32F
– Blocks 2 and 3 (bottom device) or blocks 36
and 35 (top device) in the M58BW16F
■ Security
– 64-bit unique device identifier (UID)
■ Fast programming
– Write to buffer and program capability
■ Optimized for FDI drivers
– Common Flash interface (CFI)
– Fast Program/Erase Suspend feature in
each block
■ Low power consumption
PQFP80 (T)
LBGA
LBGA80 (ZA)
10 x 8 ball array
– 100 µA typical Standby current
■ Electronic signature
– Manufacturer code: 0020h
– Top device codes:
M58BW32FT: 8838h
M58BW16FT: 883Ah
– Bottom device codes:
M58BW32FB: 8837h
M58BW16FB: 8839h
■ Automotive device grade 3:
– Temperature: –40 to 125 °C
– Automotive grade certified
March 2008
Rev 5
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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