M58BW016DB Datasheet, PDF (1/70 Pages) STMicroelectronics – 16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories

M58BW016DB M58BW016DT
M58BW016FT M58BW016FB
16 Mbit (512 Kbit x 32, boot block, burst)
3 V supply Flash memories
Features
■ Supply voltage
– V_DD = 2.7 V to 3.6 V for program, erase
and read
– V_DDQ = V_DDQIN = 2.4 V to 3.6 V for I/O
buffers
– V_PP = 12 V for fast program (optional)
■ High performance
– Access times: 70, 80 ns
– 56 MHz effective zero wait-state burst read
– Synchronous burst read
– Asynchronous page read
■ Hardware block protection
– WP pin for write protect of the 4 outermost
parameter blocks and all main blocks
– RP pin for write protect of all blocks
■ Optimized for FDI drivers
– Fast program / erase suspend latency
time < 6 µs
– Common Flash interface
■ Memory blocks
– 8 parameters blocks (top or bottom)
– 31 main blocks
■ Low power consumption
– 5 µA typical deep power-down
– 60 µA typical standby for M58BW016DT/B
150 µA typical standby for M58BW016FT/B
– Automatic standby after asynchronous read
■ Electronic signature
– Manufacturer code: 20h
– Top device code: 8836h
– Bottom device code: 8835h
■ 100 K write/erase cycling + 20 years data
retention (minimum)
■ High reliability level with over 1 M write/erase
cycling sustained
■ ECOPACK^® packages available
March 2008
Rev 17
PQFP80 (T)
LBGA
LBGA80 10 × 12 mm
1/70
www.numonyx.com
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