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M36W0R6040T1 Datasheet, PDF (1/22 Pages) Numonyx B.V – 64 Mbit (4 Mb ×16, Multiple Bank, Burst) Flash memory and 16 Mbit (1 Mb ×16) PSRAM, multi-chip package | |||
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M36W0R6040T1
M36W0R604BT1
64 Mbit (4 Mb Ã16, Multiple Bank, Burst) Flash memory
and 16 Mbit (1 Mb Ã16) PSRAM, multi-chip package
Features
â Multi-chip package
â 1 die of 64 Mbit (4 Mb x 16) Flash memory
â 1 die of 16 Mbit (1 Mb x 16) Pseudo SRAM
â Supply voltage
â VDDF = VDDP = VDDQ = 1.7 V to 1.95 V
â Low power consumption
â Electronic signature
â Manufacturer Code: 20h
â Device Code (top flash configuration),
M36W0R6040T1: 8810h
â Device Code (bottom flash configuration),
M36W0R604BT1: 8811h
â ECOPACK® packages available
Flash memory
â Programming time
â 8 µs by Word typical for Fast Factory
Program
â Double/Quadruple Word Program option
â Enhanced Factory Program options
â Memory blocks
â Multiple Bank Memory Array: 4 Mbit Banks
â Parameter Blocks (Top or Bottom location)
â Synchronous / Asynchronous Read
â Synchronous Burst Read mode: 66 MHz
â Asynchronous/ Synchronous Page Read
mode
â Random Access: 70 ns
â Dual operations
â Program Erase in one Bank while Read in
others
â No delay between Read and Write
operations
FBGA
Stacked TFBGA88 (ZAQ)
8 Ã 10 mm
â Block locking
â All blocks locked at Power-up
â Any combination of blocks can be locked
â WPF for Block Lock-Down
â Security
â 128-bit user programmable OTP cells
â 64-bit unique device number
â Common Flash Interface (CFI)
â 100 000 program/erase cycles per block
PSRAM
â Access time: 70 ns
â Low standby current: 110 µA
â Deep power down current: 10 µA
November 2007
Rev 0.3
1/22
www.numonyx.com
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