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M36P0R8070E0 Datasheet, PDF (1/22 Pages) Numonyx B.V – 256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package | |||
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M36P0R8070E0
256 Mbit (x16, multiple bank, multilevel, burst) Flash memory
128 Mbit (burst) PSRAM, 1.8 V supply, multichip package
Features
â Multichip package
â 1 die of 256 Mbit (16 Mb x 16, multiple
bank, multilevel, burst) Flash memory
â 1 die of 128 Mbit (8 Mb x16) PSRAM
â Supply voltage
â VDDF = VCCP = VDDQ = 1.7 to 1.95 V
â VPPF = 9 V for fast program (12 V tolerant)
â Electronic signature
â Manufacturer code: 20h
â Device code: 8818
â Package
â ECOPACK®
Flash memory
â Synchronous/asynchronous read
â Synchronous burst read mode:
108 MHz, 66 MHz
â Asynchronous page read mode
â Random access: 93 ns
â Programming time
â 4 µs typical Word program time using
Buffer Enhanced Factory Program
command
â Memory organization
â Multiple bank memory array: 32 Mbit banks
â Four EFA (extended flash array) blocks of
64 Kbits
â Dual operations
â Program/erase in one bank while read in
others
â No delay between read and write
operations
â Security
â 64bit unique device number
â 2112 bit user programmable OTP Cells
â 100 000 program/erase cycles per block
FBGA
TFBGA107 (ZAC)
â Block locking
â All blocks locked at power-up
â Any combination of blocks can be locked
with zero latency
â WPF for block lock-down
â Absolute write protection with VPPF = VSS
â CFI (common Flash interface)
PSRAM
â Access time: 70 ns
â Asynchronous page read
â Page size: 4, 8 or 16 words
â Subsequent read within page: 20 ns
â Synchronous burst read/write
â Low power consumption
â Active current: < 25 mA
â Standby current: 200 µA
â Deep power-down current: 10 µA
â Low power features
â PASR (partial array self refresh)
â DPD (deep power-down) mode
December 2007
Rev 2
1/22
www.numonyx.com
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