M29W800FB-KGD Datasheet, PDF (1/15 Pages) Numonyx B.V – Known good die, 8-Mbit (1 Mbit x 8 or 512 Kbits x 16), boot block, 3 V supply Flash memory

M29W800FB-KGD
Known good die, 8-Mbit (1 Mbit x 8 or 512 Kbits x 16),
boot block, 3 V supply Flash memory
Preliminary Data
Features
■ Supply voltage
– V_CC = 2.7 V to 3.6 V for program, erase and
read
■ Access times: 90 ns
■ Programming time
– 10 µs per byte/word typical
■ 19 memory blocks
– 1 boot block (top or bottom location)
– 2 parameter and 16 main blocks
■ Program/erase controller
– Embedded byte/word program algorithms
■ Erase suspend and resume modes
– Read and program another block during
erase suspend
■ Unlock bypass program command
– Faster production/batch programming
■ Temporary block unprotection mode
■ Common flash interface
– 64-bit security code
■ Low power consumption
– Standby and automatic standby
■ 100,000 program/erase cycles per block
■ Electronic signature
– Manufacturer code: 0020h
– Bottom device code M29W800FB: 225Bh
Wafer
March 2008
Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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