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M29W800DT Datasheet, PDF (1/52 Pages) STMicroelectronics – 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory | |||
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M29W800DT
M29W800DB
8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block)
3 V supply flash memory
Features
â Supply voltage
â VCC = 2.7 V to 3.6 V for program, erase and
read
â Access times: 45, 70, 90 ns
â Programming time
â 10 µs per byte/word typical
â 19 memory blocks
â 1 boot block (top or bottom location)
â 2 parameter and 16 main blocks
â Program/erase controller
â Embedded byte/word program algorithms
â Erase suspend and resume modes
â Read and program another block during
erase suspend
â Unlock bypass program command
â Faster production/batch programming
â Temporary block unprotection mode
â Common flash interface
â 64-bit security code
â Low power consumption
â Standby and automatic standby
â 100,000 program/erase cycles per block
â Electronic signature
â Manufacturer code: 0020h
â Top device code M29W800DT: 22D7h
â Bottom device code M29W800DB: 225Bh
SO44 (M)
TSOP48 (N)
12 x 20 mm
FBGA
TFBGA48 (ZE)
6 x 8 mm
March 2008
Rev 10
1/52
www.numonyx.com
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