M29W640GH Datasheet, PDF (1/90 Pages) Numonyx B.V – 64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory

M29W640GH M29W640GL
M29W640GT M29W640GB
64 Mbit (8Mb x8 or 4Mb x16, Page)
3V supply Flash memory
Feature
■ Supply Voltage
– V_CC = 2.7 to 3.6 V for Program/Erase/Read
– V_PP =12 V for Fast Program (optional)
■ Asynchronous Random/Page Read
– Page Width: 4 words
– Page Access: 25 ns
– Random Access: 60 ns, 70 ns, 90 ns
■ Fast Program commands
– 2 word/4 byte Program (without V_PP=12 V)
– 4 word/8 byte Program (with V_PP=12 V)
– 16 word/32 byte Write Buffer
■ Programming time
– 10 µs per byte/word typical
– Chip Program time: 10 s (4-word Program)
■ Memory organization
– M29W640GH/L:
128 main blocks, 64 Kbytes each
– M29W640GT/B
Eight 8 Kbytes Boot blocks (top or bottom)
127 Main blocks, 64 Kbytes each
■ Program/Erase controller
– Embedded byte/word program algorithms
■ Program/Erase Suspend and Resume
– Read from any block during Program
Suspend
– Read and Program another block during
Erase Suspend
■ ECOPACK^® packages
TSOP48 (NA)
12 x 20mm
FBGA
TFBGA48 (ZA)
6 x 8mm
FBGA
TSOP56 (NB)
14 x 20mm(1⁾
TBGA64 (ZF)
10 x 13mm(1)
1. Packages only available upon request.
■ 128 word Extended Memory block
– Extra block used as security block or to
store additional information
■ Low power consumption:Standby and
Automatic Standby
■ Unlock Bypass Program command
– Faster Production/Batch Programming
■ Common Flash Interface: 64-bit Security Code
■ V_PP/WP pin for Fast Program and Write Protect
■ Temporary Block Unprotection mode
■ 100,000 Program/Erase cycles per block
■ Electronic Signature
– Manufacturer Code: 0020h
– Device code (see Table 1)
Table 1.
Device summary
Root Part Number
M29W640GH: Uniform, last block protected by V_PP/WP
M29W640GL: Uniform, first block protected by V_PP/WP
M29W640GT: Top Boot Blocks
M29W640GB: Bottom Boot Blocks
Device code
227Eh + 220Ch + 2201h
227Eh + 220Ch + 2200h
227Eh + 2210h + 2201h
227Eh + 2210h + 2200h
March 2008
Rev 5
1/90
www.numonyx.com
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