M29W640FT Datasheet, PDF (1/71 Pages) STMicroelectronics – 64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory

M29W640FT
M29W640FB
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block)
3V Supply Flash Memory
Feature summary
■ Supply voltage
– V_CC = 2.7V to 3.6V for Program, Erase,
Read
– V_PP =12 V for Fast Program (optional)
■ Asynchronous Random/Page Read
– Page Width: 4 Words
– Page Access: 25ns
– Random Access: 60ns, 70ns
■ Programming time
– 10µs per Byte/Word typical
– 4 Words / 8 Bytes Program
■ 135 Memory Blocks
– 1 Boot Block and 7 Parameter Blocks,
8 KBytes each (Top or Bottom location)
– 127 Main Blocks, 64 KBytes each
■ Program/Erase Controller
– Embedded Byte/Word Program algorithms
■ Program/Erase Suspend and Resume
– Read from any Block during Program
Suspend
– Read and Program another Block during
Erase Suspend
■ Unlock Bypass Program command
– Faster Production/Batch Programming
■ V_PP/WP pin for Fast Program and Write Protect
■ Temporary Block Unprotection mode
■ Common Flash Interface
– 64-bit Security Code
TSOP48 (N)
12 x 20mm
FBGA
TFBGA48 (ZA)
6x8mm
■ Extended Memory Block
■ Extra block used as security block or to store
additional information
■ Low power consumption
– Standby and Automatic Standby
■ 100,000 Program/Erase cycles per block
■ Electronic Signature
– Manufacturer Code: 0020h
■ ECOPACK^® packages
Table 1.
Device Codes
Root Part Number
M29W640FT
M29W640FB
Device Code
22EDh
22FDh
December 2007
Rev 7
1/71
www.numonyx.com
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