M29DW323DT Datasheet, PDF (1/51 Pages) STMicroelectronics – 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory

M29DW323DT
M29DW323DB
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
■ SUPPLY VOLTAGE
– V_CC = 2.7V to 3.6V for Program, Erase
and Read
– V_PP =12V for Fast Program (optional)
■ ACCESS TIME: 70ns
■ PROGRAMMING TIME
– 10µs per Byte/Word typical
– Double Word/ Quadruple Byte Program
■ MEMORY BLOCKS
– Dual Bank Memory Array: 8Mbit+24Mbit
– Parameter Blocks (Top or Bottom
Location)
■ DUAL OPERATIONS
– Read in one bank while Program or Erase
in other
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■ V_PP/WP PIN for FAST PROGRAM and
WRITE PROTECT
■ TEMPORARY BLOCK UNPROTECTION
MODE
■ COMMON FLASH INTERFACE
– 64 bit Security Code
■ EXTENDED MEMORY BLOCK
– Extra block used as security block or to
store additional information
■ LOW POWER CONSUMPTION
– Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29DW323DT: 225Eh
– Bottom Device Code M29DW323DB:
225Fh
Figure 1. Packages
TSOP48 (N)
12 x 20mm
FBGA
TFBGA48 (ZE)
6 x 8mm
March 2008
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