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JS28F128P30T85A Datasheet, PDF (1/97 Pages) Numonyx B.V – Numonyx™ StrataFlash® Embedded Memory (P30) | |||
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Numonyx⢠StrataFlash Embedded Memory
(P30)
Product Features
Datasheet
 High performance
 Security
â 85 ns initial access
â One-Time Programmable Registers:
â 52 MHz with zero wait states, 17ns clock-to-data output
⢠64 unique factory device identifier bits
synchronous-burst read mode
⢠2112 user-programmable OTP bits
â 25 ns asynchronous-page read mode
â Selectable OTP Space in Main Array:
â 4-, 8-, 16-, and continuous-word burst mode
⢠Four pre-defined 128-KByte blocks (top or bottom
â Buffered Enhanced Factory Programming (BEFP) at 5 μs/
configuration)
byte (Typ)
⢠Up to Full Array OTP Lockout
â 1.8 V buffered programming at 7 μs/byte (Typ)
â Absolute write protection: VPP = VSS
 Architecture
â Power-transition erase/program lockout
â Individual zero-latency block locking
â Multi-Level Cell Technology: Highest Density at Lowest
â Individual block lock-down
Cost
â Asymmetrically-blocked architecture
 Software
â Four 32-KByte parameter blocks: top or bottom
â 20 μs (Typ) program suspend
configuration
â 20 μs (Typ) erase suspend
â 128-KByte main blocks
â Numonyx⢠Flash Data Integrator optimized
 Voltage and Power
â VCC (core) voltage: 1.7 V â 2.0 V
â VCCQ (I/O) voltage: 1.7 V â 3.6 V
â Standby current: 20μA (Typ) for 64-Mbit
â Basic Command Set and Extended Command Set
compatible
â Common Flash Interface capable
 Density and Packaging
â 4-Word synchronous read current:
â 56- Lead TSOP package (64, 128, 256,
13 mA (Typ) at 40 MHz
512- Mbit)
 Quality and Reliability
â 64- Ball Numonyx⢠Easy BGA package (64,
â Operating temperature: â40 °C to +85 °C
128, 256, 512- Mbit)
â Minimum 100,000 erase cycles per block
â ETOX⢠VIII process technology
â Numonyx⢠QUAD+ SCSP (64, 128, 256,
512- Mbit)
â 16-bit wide data bus
306666-12
August 2008
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