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28F128L30 Datasheet, PDF (1/102 Pages) Numonyx B.V – StrataFlash® Wireless Memory | |||
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Numonyx⢠StrataFlash® Wireless Memory
(L30)
28F128L30, 28F256L30
Datasheet
Product Features
 High performance Read-While-Write/Erase
 Power
â 85 ns initial access
â 52 MHz with zero wait state, 17 ns clock-to-
data output synchronous-burst mode
â VCC (core) = 1.7 V - 2.0 V
â VCCQ (I/O) = 2.2 V - 3.3 V
â Standby current: 30 µA (Typ) for 256-Mbit
â 25 ns asynchronous-page mode
â 4-, 8-, 16-, and continuous-word burst
mode
â Burst suspend
â Programmable WAIT configuration
â Buffered Enhanced Factory Programming
(BEFP) at 5 µs/byte (Typ)
â 1.8 V low-power buffered programming at
7 µs/byte (Typ)
 Architecture
â 4-Word synchronous read current: 16 mA
(Typ) at 52 MHz
â Automatic Power Savings mode
 Security
â OTP space: 64 unique factory device
identifier bits; 64 user-programmable OTP
bits; Additional 2048 user-programmable
OTP bits
â Absolute write protection: VPP = GND
â Power-transition erase/program lockout
â Asymmetrically-blocked architecture
â Individual zero-latency block locking
â Multiple partitions: 8-Mbit: 128- Mbit
devices; 16-Mbit: 256-Mbit devices
â Four 16-Kword parameter blocks: top or
bottom configurations
â 64-Kword main blocks
â Dual-operation: Read-While-Write (RWW)
or Read-While-Erase (RWE)
â Status register for partition and device
status
 Density and Packaging
â 128- and 256-Mbit density in VF BGA
packages
â Individual block lock-down
 Software
â 20 µs (Typ) program suspend
â 20 µs (Typ) erase suspend
â Numonyx⢠Flash Data Integrator
(Numonyx⢠FDI) optimized
 Quality and Reliability
â Expanded temperature: â25° C to +85° C
â Minimum 100,000 erase cycles per block
â Intel ETOX* VIII process technology (0.13
µm)
â 128/0 and 256/0 Density in SCSP
â 16-bit wide data bus
251903-11
November 2007
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