NTE904 Datasheet, PDF (2/3 Pages) NTE Electronics – Integrated Circuit General Purpose Transistor Array (Two Isolated Transistors and a Darlington Connected Transistor Pair)

Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Static Characteristics
Collector Cutoff Current
I_CBO V_CB = 10V, I_E = 0
I_CEO V_CE = 10V, I_B = 0
Collector Cutoff Current (Darlington Pair)
I_CEOD V_CE = 10V, I_B = 0
Collector–Emitter Breakdown Voltage
V_(BR)CEO I_C = 1mA, I_B = 0
Collector–Base Breakdown Voltage
V_(BR)CBO I_C = 10µA, I_E = 0
Emitter–Base Breakdown Voltage
V_(BR)EBO I_E = 10µA, I_C = 0
Collector–Substrate Breakdown Voltage V_(BR)CIO I_C = 10µA, I_C1 = 0
Collector–Emitter Saturation Voltage
V_CE(sat) I_C = 10mA, I_B = 1mA
Static Forward Current Transfer Ratio
h_FE V_CE = 3V, I_C = 10mA
V_CE = 3V, I_C = 1mA
V_CE = 3V, I_C = 10µA
Magnitude of Static–Beta Ratio
(Isolated Transistors Q₁ and Q₂)
V_CE = 3V, I_C1 = I_C2 = 1mA
Static Forward Current Transfer Ratio
(Darlington Pair Q₃ and Q₄)
h_FED
V_CE = 3V, I_C = 1mA
V_CE = 3V, I_C = 10µA
Base–Emitter Voltage
V_BE V_CE = 3V, I_E = 1mA
V_CE = 3V, I_E = 10mA
Input Offset Voltage
V_CE = 3V, I_E = 1mA
Temperature Coefficient of Base–Emitter
Voltage (Q₁ – Q₂)
V_CE = 3V, I_E = 1mA
Base (Q₃)–Emitter (Q₄) Voltage
Darlington Pair
V_BED
V_CE = 3V, I_E = 10mA
V_CE = 3V, I_E = 1mA
Temperature Coefficient of Base–Emitter
Voltage (Darlington Pair Q₃–Q₄)
V_CE = 3V, I_E = 1mA
Temperature Coefficient of Magnitude of
Input Offset Voltage
V_CC = 6V, V_EE = –6V,
I_C1 = I_C2 = 1mA
Low Frequency Noise Figure
NF V_CE = 3V, I_C = 100µA,
f = 1kHz, R_S = 1kΩ
Low Frequency, Small–Signal Equivalent Circuit Characteristics
Forward Current Transfer Ratio
Short–Circuit Input Impedance
Open–Circuit Output Impedance
Open–Circuit Reverse Voltage Transfer Ratio
Admittance Characteristics
h_fe V_CE = 3V, I_C = 1mA, f = 1kHz
h_ie
h_oe
h_re
Forward Transfer Admittance
Input Admittance
Output Admittance
Gain–Bandwidth Product
Emitter–Base Capacitance
Collector–Base Capacitance
Collector–Substrate Capacitance
Y_fe V_CE = 3V, I_C = 1mA, f = 1kHz
Y_ie
Y_oe
f_T
V_CE = 3V, I_C = 3mA
C_EB V_EB = 3V, I_E =0
C_CB V_CB = 3V, I_C = 0
C_CI V_CI = 3V, I_C = 0
Min Typ Max Unit
– 0.002 –
nA
–
– 0.5 µA
–
–
5
µA
15 24 –
V
30 60 –
V
5
7
–
V
40 60 –
V
– 0.23 0.5 V
50 100 –
60 100 200
54 –
–
0.9 0.97 –
2000 5400 –
1000 2800 –
0.600 0.715 0.800 V
– 0.800 0.900 V
– 0.48 2.0 mV
– 1.9 – mV/°C
– 1.46 1.60 V
1.10 1.32 1.50 V
– 4.4 – mV/°C
– 10 – µV/°C
– 3.25 –
dB
– 110 –
– 3.5 –
– 15.6 –
1.8 x 10⁴ (Typ)
kΩ
µmhos
31–j1.5 (Typ)
0.3+j0.04 (Typ)
0.001+j0.03 (Typ)
300 500 –
– 0.6 –
– 0.58 –
– 2.8 –
mmho
mmho
mmho
MHz
pF
pF
pF