NTE5940 Datasheet, PDF (2/3 Pages) NTE Electronics – Silicon Power Rectifier Diode, 15 Amp

Electrical Specifications:
Parameter
Symbol
Test Conditions
Rating
Maximum Average Forward Current I_{F (AV)} 180° sinusoidal condition, T_C = +150°C Max
15
Maximum Peak One–Cycle
Non–Repetitive Surge Current
I_FSM
Half cycle 50Hz sine wave
or 6ms rectangular pulse
Following any rated
load condition and
239
Half cycle 60Hz sine wave ^{with rated V}RRM
250
at 5ms rectangular pulse ^applied
Maximum I²t for Fusing
Maximum I²t for Individual Device
Fusing
Maximum I²pt
I²t
I²pt
Half cycle 50Hz sine wave
or 6ms rectangular pulse
Following any rated
load condition and
Half cycle 60Hz sine wave ^{with V}RRM ^applied
at 5ms rectangular pulse ^{following surge = 0}
t = 10ms
t = 8.3ms
With rated V_RRM ap-
plied following surge,
initial T_J = +150°C
t = 10ms
t = 8.3ms
With V_RRM = 0 fol-
lowing surge, initial
T_J = +150°C
t = 0.1 to 10ms, V_RRM = 0 following surge, Note 2
284
297
286
260
403
368
3870
Maximum Peak Forward Voltage
V_FM I_{F (AV)} = 15A (47.1A peak), T_C = +150°C
1.5
Maximum Average Reverse Current I_R(AV) Maximum rated I_F(AV) and T_C = +150°C
10
Unit
A
A
A
A
A
A²s
A²s
A²s
A²s
A²pt
V
mA
Note 2. I²t for times t_x = I²pt  pt_x.
Thermal–Mechanical Specifications:
Parameter
Maximum Operation Junction Temperature
Maximum Storage Temperature
Maximum Internal Thermal Resistance
Junction–to–Case
Thermal Resistance, Case–to–Sink
Mounting Torque
Approximate Weight
Symbol
Test Conditions
T_J
T_stg
R_thJC
DC operation
Rating Unit
–65 to + 175 °C
–65 to + 175 °C
0.65
°C/W
R_thCS
T
Mounting surface flat, smooth and
greased
Non–lubricated threads
wt
0.25
2.3 – 3.5
(20 – 30)
28.5 (1)
°C/W
m•N
(in•lb)
g (oz)