NTE5906 Datasheet, PDF (2/3 Pages) NTE Electronics – Silicon Power Rectifier Diode, 40 Amp

Electrical Specifications:
Parameter
Symbol
Test Conditions
Rating Unit
Maximum Average Forward Current I_{F (AV)} 180° sinusoidal condition, T_C = +140°C Max
40
A
Maximum Peak One–Cycle
Non–Repetitive Surge Current
I_FSM
Half cycle 50Hz sine wave
or 8ms rectangular pulse
Following any rated
load condition and
480
A
Half cycle 60Hz sine wave ^{with rated V}RRM
at 5ms rectangular pulse ^applied
500
A
Maximum I²t for Fusing
Half cycle 50Hz sine wave
or 6ms rectangular pulse
Following any rated
load condition and
570
A
Half cycle 60Hz sine wave ^{with V}RRM ^applied 586
A
at 3ms rectangular pulse ^{following surge = 0}
I²t t = 10ms
t = 8.3ms
With rated V_RRM ap- ¹¹⁵⁰
A²s
plied following surge _{1050 A}2_s
Maximum I²t for Individual Device
Fusing
t = 10ms
t = 8.3ms
With V_RRM = 0 fol- ¹⁶⁰⁰
A²s
lowing surge
1450 A²s
Maximum I²pt
I²pt t = 0.1 to 10ms, V_RRM = 0 following surge
16000 A²pt
Maximum Peak Forward Voltage
Maximum Value of Threshold
Voltage
V_FM I_{F (AV)} = 40A (125 peak), T_J = +25°C
V_{M (TO)} T_J = +100°C
1.30
V
0.69
V
Maximum Value of Forward Slope
Resistance
r_t
T_J = +100°C
3.79 mΩ
Thermal–Mechanical Specifications:
Parameter
Maximum Operation Junction Temperature
Maximum Storage Temperature
Maximum Internal Thermal Resistance
Junction–to–Case
Thermal Resistance, Case–to–Sink
Mounting Torque
Approximate Weight
Symbol
Test Conditions
T_J
T_stg
R_thJC
DC operation
Rating Unit
–65 to + 190 °C
–65 to + 190 °C
1.00
K/W
R_thCS
T
Mounting surface flat, smooth and
greased
Non–lubricated threads
wt
0.25
2.3 – 3.4
(20 – 30)
17 (0.8)
K/W
m•N
(in•lb)
g (oz)