NTE5892 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Power Rectifier Diode, 16 Amp

Electrical Specifications:
Parameter
Symbol
Test Conditions
Maximum Average Forward Current
Maximum RMS Forward Current
Maximum Peak One–Cycle
Non–Repetitive Surge Current
I_{F (AV)}
I_F(RMS)
I_FSM
180° sinusoidal condition, T_C = +140°C Max
t = 10ms Sinusoidal Half Wave,
t = 8.3ms ^{No voltage reapplied}
Maximum I²t for Individual Device
Fusing
Maximum I²pt
I²t
I²pt
t = 10ms 100% rated voltage reapplied,
t = 8.3ms ^{TJ = +175°C}
t = 10ms 100% rated voltage reapplied,
t = 8.3ms ^{Initial TJ = +175°C}
t = 0.1 to 10ms, No voltage reapplied, Note 1
Maximum Peak Forward Voltage
V_FM
Maximum Value of Threshold
Voltage
V_{M (TO)}
Maximum Value of Forward Slope
r_t
Resistance
Note 1. I²t for time t_x = I²Ç¨t S Ǩt_x
I_FM = 50A, T_J = +25°C
T_J = +175°C
T_J = +175°C
Rating
16
25
295
310
350
370
612
560
6125
1.23
0.78
Unit
A
A
A
A
A
A
A²s
A²s
A²pt
V
V
7.55 mΩ
Thermal–Mechanical Specifications:
Parameter
Symbol
Test Conditions
Rating Unit
Maximum Operation Junction Temperature
Maximum Storage Temperature
Maximum Internal Thermal Resistance
Junction–to–Case
Thermal Resistance, Case–to–Sink
Mounting Torque
Approximate Weight
T_J
T_stg
R_thJC
DC operation
–65 to + 175 °C
–65 to + 200 °C
1.6
K/W
R_thCS
T
wt
Mounting surface flat, smooth and
0.5
K/W
greased
Non–lubricated threads
1.2 – 1.5 m•N
(10.5 – 13.5) (in•lb)
11 (0.25) g (oz)
.437
(11.1)
Max
.250 (6.35) Max
.060 (1.52)
Dia Min
.175 (4.45) Max
10–32 NF–2A
.424 (10.8)
Dia Max
.405
(10.3)
Max
1.250 (31.75) Max
.453
(11.5)
Max