NTE5878 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Power Rectifier Diode, 12 Amp, DO4

Electrical Specifications:
Parameter
Symbol
Test Conditions
Maximum Average Forward Current
Maximum RMS Forward Current
Maximum Peak One−Cycle
Non−Repetitive Surge Current
I_{F (AV)}
I_F(RMS)
I_FSM
180° sinusoidal condition, T_C = +144°C Max
t = 10ms Sinusoidal Half Wave,
t = 8.3ms ^{No voltage reapplied}
Maximum I²t for Individual Device
Fusing
Maximum I²pt
I²t
I²pt
t = 10ms 100% rated voltage reapplied,
t = 8.3ms ^{TJ = +175°C}
t = 10ms 100% rated voltage reapplied,
t = 8.3ms ^{Initial TJ = +175°C}
t = 0.1 to 10ms, No voltage reapplied, Note 1
Maximum Peak Forward Voltage
Maximum Value of Threshold
Voltage
V_FM I_FM = 38A, T_J = +25°C
V_{M (TO)} T_J = +175°C
Maximum Value of Forward Slope
r_t
Resistance
Note 1. I²t for time t_x = I²Ç¨t S Ǩt_x
T_J = +175°C
Rating
12
19
225
235
265
280
351
320
3511
1.26
0.68
Unit
A
A
A
A
A
A
A²s
A²s
A²pt
V
V
13.51 mΩ
Thermal−Mechanical Specifications:
Parameter
Symbol
Test Conditions
Rating Unit
Maximum Operation Junction Temperature
Maximum Storage Temperature
Maximum Internal Thermal Resistance
Junction−to−Case
T_J
T_stg
R_thJC
DC operation
−65 to + 175 °C
−65 to + 200 °C
2.0
K/W
Thermal Resistance, Case−to−Sink
R_thCS Mounting surface flat, smooth and
0.5
K/W
greased
Mounting Torque
T Non−lubricated threads
1.2 − 1.5 m•N
(10.5 − 13.5) (in•lb)
Approximate Weight
wt
11 (0.25) g (oz)
.437
(11.1)
Max
.250 (6.35) Max
.060 (1.52)
Dia Min
.175 (4.45) Max
10−32 NF−2A
.424 (10.8)
Dia Max
.405
(10.3)
Max
1.250 (31.75) Max
.453
(11.5)
Max