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NTE5844 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Power Rectifier Diode, 20 Amp | |||
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Electrical Specifications:
Parameter
Symbol
Test Conditions
Rating Unit
Maximum Average Forward Current
Maximum Peak OneâCycle
NonâRepetitive Surge Current
IF (AV)
IFSM
180° sinusoidal condition, TC = +150°C Max
t = 10ms Sinusoidal Half Wave,
t = 8.3ms No voltage reapplied
20
A
400
A
425
A
Maximum I2t for Fusing
Maximum I2t for Individual Device
Fusing
t = 10ms 100% rated voltage reapplied,
t = 8.3ms TJ = +175°C
I2t t = 10ms No voltage reapplied,
t = 8.3ms Initial TJ = +175°C
t = 10ms 100% rated voltage reapplied
t = 8.3ms
437
A
462
A
540 A2s
493 A2s
765 A2s
700 A2s
Maximum I2pt
I2pt t = 0.1 to 10ms, No voltage reapplied, Note 1
7640 A2pt
Maximum Peak Forward Voltage
Maximum Value of Threshold
Voltage
VFM IFM = 63A, TJ = +25°C
VM (TO) TJ = +175°C
1.23
V
0.78
V
Maximum Value of Forward Slope
rt
Resistance
Note 1. I2t for time tx = I2Ǩt S Ǩtx
TJ = +175°C
7.55 mâ¦
ThermalâMechanical Specifications:
Parameter
Symbol
Test Conditions
Rating Unit
Maximum Operation Junction Temperature
Maximum Storage Temperature
Maximum Internal Thermal Resistance
JunctionâtoâCase
TJ
Tstg
RthJC
DC operation
â65 to + 175 °C
â65 to + 200 °C
1.6
K/W
Thermal Resistance, CaseâtoâSink
RthCS Mounting surface flat, smooth and
0.25
K/W
greased
Mounting Torque
T Nonâlubricated threads
1.2 â 1.5 mâ¢N
(10.5 â 13.5) (inâ¢lb)
Approximate Weight
wt
11 (0.25) g (oz)
.437
(11.1)
Max
.250 (6.35) Max
.060 (1.52)
Dia Min
.175 (4.45) Max
10â32 NFâ2A
.424 (10.8)
Dia Max
.405
(10.3)
Max
1.250 (31.75) Max
.453
(11.5)
Max
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