NTE5726 Datasheet, PDF (2/3 Pages) NTE Electronics – Powerblock Module

Electrical Specifications:
Parameter
Symbol
Test Conditions
Rating Unit
Maximum Peak One–Cycle
Non–Repetitive Surge Current
I_FSM t = 10ms Sinusoidal Half Wave, 100% V_RRM 4300 A
t = 8.3ms ^{Reapplied, Initial TJ = +125°C}
4500 A
Maximum I²t for Fusing
Maximum I²pt
I²t
I²pt
t = 10ms
t = 8.3ms
Sinusoidal Half Wave, No Voltage
Reapplied, Initial T_J = +125°C
t = 10ms
t = 8.3ms
Sinusoidal Half Wave, 100% V_RRM
Reapplied, Initial T_J = +125°C
t = 10ms
t = 8.3ms
Sinusoidal Half Wave, No Voltage
Reapplied, Initial T_J = +125°C
t = 0.1 to 10ms, no voltage reapplied
5100
5350
92.5
84.4
131.0
119.3
1310
A
A
A²s
A²s
A²s
A²s
A²pt
Threshold Voltage, Low level
Threshold Voltage, High level
On–State Slope Resistance, Low Level
On–State Slope Resistance, High Level
Maximum On–State Voltage Drop
Maximum Holding Current
Maximum Latching Current
Maximum Peak Gate Power
Maximum Average Gate Power
Maximum Peak Gate Current
Maximum Peak Negative Gate Voltage
Maximum Required DC Gate Trigger
Voltage to Trigger
Maximum Required DC Gate Trigger
Current to Trigger
Maximum Gate Voltage that will not
Trigger
Maximum Gate Current that will not
Trigger
Maximum Rate of Rise of
Turned–On Current
Typical Delay Time
Typical Rise Time
Typical Turn–Off Time
V_T(TO)1
V_T(TO)2
r_t1
r_t2
V_TM
I_H
I_L
P_GM
P_G(AV)
+I_GM
–V_GT
V_GT
I_GT
V_GD
I_GD
di/dt
t_d
t_r
t_q
T_J = +125°C, (16.7% x π x I_T(AV) < I < π x I_T(AV))
T_J = +125°C, (π x I_T(AV) < I < 20 x π x I_T(AV))
T_J = +125°C, (16.7% x π x I_T(AV) < I < π x I_T(AV))
T_J = +125°C, (π x I_T(AV) < I < 20 x π x I_T(AV))
T_J = +125°C, I_TM = π x I_T(AV), 180° Condition,
Av. Power = V_T(TO) x I_T(AV) + r_t x (I_T(RMS))²
Anode Supply = 12V, Initial I_T = 30A, T_J = +25°C
Anode Supply = 12V, Resistive Load = 1Ω,
Gat Pulse: 10V, 100µs, T_J = +25°C
T_J = +125°C, t_p ≤ 5ms
T_J = +125°C, f = 50Hz
T_J = +125°C, t_p ≤ 5ms
T_J = +125°C, t_p ≤ 5ms
T_J = –40°C Anode Supply = 12V,
T_J = +25°C ^{Resistive Load: RA = 1Ω}
T_J = +125°C
T_J = –40°C Anode Supply = 12V,
T_J = +25°C ^{Resistive Load: RA = 1Ω}
T_J = +125°C
T_J = +125°C, Rated V_DRM Applied
0.88
1.12
1.20
0.86
1.5
500
300
10
2.0
3.0
5.0
4.0
3.0
2.0
350
200
100
0.3
T_J = +125°C, Rated V_DRM Applied
10
T_J = +125°C, I_TM = 400A, Rated V_DRM Applied
500
T_J = +25°C, Gate Current = 1A di_G/dt = 1A/µs,
1.0
V_D = 0.67% V_DRM
2.0
T_J = +25°C, I_TM = 300A, –dI/dt = 15A/µs, V_R = 50V, 50–150
dV/dt = 20V/µs, Gate 0V, 100Ω
V
V
mΩ
mΩ
V
mA
mA
W
W
A
V
V
V
V
mA
mA
mA
V
mA
A/µs
µs
µs
µs