NTE56058 Datasheet, PDF (2/2 Pages) NTE Electronics – TRIAC, 16A

Electrical Characteristics: (T_J = +25°C unless otherwise specfied)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static Characteristics
Gate Trigger Current
MT₂ (+), G (+)
MT₂ (+), G (–)
MT₂ (–), G (–)
MT₂ (–), G (+)
Latching Current
MT₂ (+), G (+)
MT₂ (+), G (–)
MT₂ (–), G (–)
MT₂ (–), G (+)
Holding Current
On–State Voltage
Gate Trigger Voltage
Off–State Leakage Current
Dynamic Characteristics
I_GT V_D = 12V, I_T = 0.1A
I_L
V_D = 12V, I_T = 0.1A
I_H V_D = 12V, I_T = 0.1A
V_T I_T = 20A
V_GT V_D = 12V, I_T = 0.1A
V_D = 400V, I_T = 0.1A, T_J = +125°C
I_D
V_D = V_DRMmax, T_J = +125°C
–
5 35 mA
–
8 35 mA
– 10 35 mA
– 22 70 mA
–
7 40 mA
– 20 60 mA
–
8 40 mA
– 10 60 mA
–
6 30 mA
– 1.2 1.6 V
– 0.7 1.5 V
0.25 0.4 –
V
– 0.1 0.5 mA
Critical Rate–of–Rise of
Off–State Voltage
dV_D/dt V_DM = 67% V_DRMmax, T_J = +125°C,
Exponential Waveform, Gate Open
100 250 – V/µs
Critical Rate–of–Change of
Commutating Voltage
dV_com/dt V_DM = 400V, T_J = +95°C, I_TRMS = 16A, –
20
– V/µs
dI_com/dt = 7.2A/ms, Gate Open
Gate Controlled Turn–On Time
t_gt I_TM = 20A, V_D = V_DRMmax, I_G = 0.1A,
–
2
– µs
dI_G/dt = 5A/µs
Isolation Characteristics
RMS Isolation Voltage from All
3 Pins to External Heatsink
V_ISOL R.H. ≤ 65%, Clean and Dustfree
–
– 1500 V
Capacitance from T2 to
External Heatsink
C_ISOL f = 1MHz
– 12 – pF
.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.669
(17.0)
Max
.122 (3.1)
Dia
.165
(4.2)
MT₁ MT₂ G
.531
(13.5)
Min
.173 (4.4)
Max
.114 (2.9)
Max
.100 (2.54)
.059 (1.5) Max