NTE56051 Datasheet, PDF (2/2 Pages) NTE Electronics – TRIAC, 8A Low Logic Level

Electrical Characteristics: (T_J = +25°C unless otherwise specfied)
Parameter
Symbol
Test Conditions
Static Characteristics
Gate Trigger Current
MT₂ (+), G (+)
MT₂ (+), G (–)
MT₂ (–), G (–)
MT₂ (–), G (+)
Latching Current
MT₂ (+), G (+)
MT₂ (+), G (–)
MT₂ (–), G (–)
MT₂ (–), G (+)
Holding Current
On–State Voltage
Gate Trigger Voltage
Off–State Leakage Current
Dynamic Characteristics
I_GT V_D = 12V, I_T = 0.1A
I_L
V_D = 12V, I_T = 0.1A
I_H V_D = 12V, I_T = 0.1A
V_T I_T = 5A
V_GT V_D = 12V, I_T = 0.1A
V_D = 400V, I_T = 0.1A, T_J = +125°C
I_D
V_D = V_DRMmax, T_J = +125°C
Critical Rate–of–Rise of
Off–State Voltage
Gate Controlled Turn–On Time
dV_D/dt
t_gt
V_DM = 67% V_DRMmax, T_J = +125°C,
Exponential Waveform, R_GK = 1kΩ
I_TM = 12A, V_D = V_DRMmax, I_G = 0.1A,
dI_G/dt = 5A/µs
Min Typ Max Unit
– 2.5 5 mA
– 3.5 5 mA
– 3.5 5 mA
– 6.5 10 mA
– 1.6 15 mA
– 8.5 20 mA
– 1.2 15 mA
– 2.5 20 mA
– 1.5 10 mA
– 1.4 1.7 V
– 0.7 1.5 V
0.25 0.4 –
V
– 0.1 0.5 mA
–
5
– V/µs
–
2
– µs
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
MT₂
.500
(12.7)
Max
.070 (1.78) Max
MT₁
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Gate
MT₂