NTE56039 Datasheet, PDF (2/2 Pages) NTE Electronics – TRIAC, 4A Sensitive Gate

Electrical Characteristics: (T_J = +25°C unless otherwise specfied)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static Characteristics
Gate Trigger Current
MT₂ (+), G (+)
MT₂ (+), G (–)
MT₂ (–), G (–)
MT₂ (–), G (+)
Latching Current
MT₂ (+), G (+)
MT₂ (+), G (–)
MT₂ (–), G (–)
MT₂ (–), G (+)
Holding Current
On–State Voltage
Gate Trigger Voltage
Off–State Leakage Current
Dynamic Characteristics
I_GT V_D = 12V, I_T = 0.1A
– 2.5 10 mA
– 4.0 10 mA
– 5.0 10 mA
– 11.0 25 mA
I_L
V_D = 12V, I_T = 0.1A
– 3.0 15 mA
– 10.0 20 mA
– 2.5 15 mA
– 4.0 20 mA
I_H V_D = 12V, I_T = 0.1A
– 2.2 15 mA
V_T I_T = 5A
– 1.4 1.7 V
V_GT V_D = 12V, I_T = 0.1A
– 0.7 1.5 V
V_D = 400V, I_T = 0.1A, T_J = +125°C 0.25 0.4 –
V
I_D V_D = 500V, T_J = +125°C
– 0.1 0.5 mA
Critical Rate–of–Rise of
Off–State Voltage
dV_D/dt V_DM = 335V, T_J = +125°C,
– 50 – V/µs
Exponential Waveform, Gate Open
Gate Controlled Turn–On Time
t_gt I_TM = 6A, V_D = 500V, I_G = 0.1A,
dI_G/dt = 5A/µs
–
2
– µs
.307 (7.8)
Max
.100 (2.54)
.118 (3.0)
Min
MT₁ MT₂ G
.147
(3.75)
.437
(11.1)
Max
.100 (2.54)
.602
(15.3)
Min
See
Note
.090 (2.29)
.047 (1.2)
Note: Center Pin connected to metal part of mounting surface.