NTE5536 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Controlled Rectifier (SCR)

Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Peak Forward Blocking Voltage
V_DRM T_J = +125°C
800 –
–
V
Peak Forward or Reverse
Blocking Current
I_DRM, Rated V_DRM or V_RRM, T_J = +25°C
–
I_RRM
– 10 µA
Rated V_DRM or V_RRM, T_J = +125°C –
–
2 mA
Forward ON Voltage
V_TM I_TM = 80A, Note 3
– 1.6 2.0 V
Gate Trigger Current, Continuous DC
I_GT Anode Voltage = 12V, R_L = 100Ω
– 15 50 mA
Anode Voltage = 12V, R_L = 100Ω,
–
30 90 mA
T_C = –40°C
Gate Trigger Voltage, Continuous DC
V_GT Anode Voltage = 12V, R_L = 100Ω
– 1.0 1.5 V
Gate Non–Trigger Voltage
V_GD Anode Voltage = 800V, R_L = 100Ω, 0.2 –
–
V
T_J = +125°C
Holding Current
Turn–On Time
I_H Anode Voltage = 12V
t_gt I_TM = 40A, I_GT = 60mA
– 30 60 mA
– 1.5 – µs
Critical Rate of Rise of Off–State
Voltage
dv/dt V_DRM = 800V, Gate Open,
Exponential Waveform
– 50 – V/µs
Note 3. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.070 (1.78) Max
Cathode
.100 (2.54)
.250
(6.35)
Max
.500
(12.7)
Min
Gate
Anode/Tab