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NTE5500 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Controlled Rectifier (SCR) 16 Amp
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Absolute Maximum Ratings (Cont’d): (TJ = +125°C unless otherwise specified)
Peak Gate Power – Forward, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Average Gate Power – Forward, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Peak Gate Current – Forward, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Gate Voltage – Forward, VGFM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Peak Gate Voltage – Reverse, VGRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Stud Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 in. lb. (3.33 mN)
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Peak Forward or Reverse Blocking Current IDRM, IRRM TJ = +125°C
NTE5500 thru NTE5506
NTE5507
NTE5508
NTE5509
Gate Trigge Current (Continuous DC)
Gate Trigger Voltage (Continuous DC)
Holding Current
Forward ON Voltage
Turn–On Time
Turn–Off Time
Forward Voltage Application Rate
Thermal Resistance, Junction to Case
IGT
VGT
IHOLD
VTM
tgt
tq
dv/dt
RΘJC
Anode Voltage = 7V, RL = 50Ω
Anode Voltage = 7V, RL = 50Ω
Anode Voltage = 7V, Gate Open
IT = 20A
IT = 10A, IG = 100mA
TJ = +125°C, IT = 10A, IR = 10A,
dv/dt = 30V/µs Min,
VDRM = Rated Voltage
TJ = +125°C, Gate Open
Min Typ Max Unit
– – 10 mA
– – 8 mA
– – 6 mA
– – 4 mA
– 10 25 mA
0.25 – 3.0 V
– 20 – mA
– 1.1 1.5 V
– 1.0 – µs
– 30 – µs
– 30 – V/µs
– 1.0 2.0 °C/W
.562
(14.28)
Max
Gate
Cathode
1.193
(30.33)
Max
.453
(11.5)
Max
.200 (5.08) Max
Anode
1/4–28 UNF–2A