NTE5491 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Controlled Rectifier (SCR) 10 Amp

Electrical Characteristics: (T_J = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Average Forward Blocking Current
NTE5491
NTE5492
I_D(AV)
Rated V_DRM , Gate Open
T_J = +125°C
– – 6.5 mA
– – 6.0 mA
NTE5494
– – 4.0 mA
NTE5496
– – 2.5 mA
Average Reverse Blocking Current
NTE5491
NTE5492
I_R(AV)
Rated V_RRM , Gate Open
T_J = +125°C
– – 6.5 mA
– – 6.0 mA
NTE5494
– – 4.0 mA
NTE5496
– – 2.5 mA
Peak Forward Blocking Current
Peak Reverse Blocking Current
Peak On–State Voltage
DC Gate–Trigger Current
DC Gate–Trigger Voltage
Gate Non–Trigger Voltage
DC Holding Current
Critical Rate–of–Rise of Off–State
Voltage
I_DRM
I_RRM
V_TM
I_GT
V_GT
V_GD
I_H
dv/dt
Rated V_DRM, Gate Open
– – 10
Rated V_RRM, Gate Open,
T_J = +125°C
– – 20
I_TM = 50.3A Peak, Note 1
––2
V_AK = 12VDC, R_L = 50Ω
– – 40
V_AK = 12VDC, R_L = 50Ω
– 0.65 2.0
Rated V_DRM, R_L = 50Ω, T_J = +125°C 0.25 – –
V_AK = 12V, Gate Open
– 7.3 50
Rated V_DRM, Exponential Waveform, – 30 –
T_C = +125°C, Gate Open
µA
mA
V
mA
V
V
mA
V/µs
Note 1. Pulse Test: Pulse Width ≤ 1ms, Duty Cycle ≤ 2%.
.562
(14.28)
Max
Gate
Cathode
1.193
(30.33)
Max
.453
(11.5)
Max
.200 (5.08) Max
Anode
1/4–28 UNF–2A