NTE5461 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Controlled Rectifier (SCR) 10 Amp

Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Peak Forward or Reverse Blocking
Current
I_DRM, Rated V_DRM or V_RRM
I_RRM
T_C = +25°C
–
T_C = +100°C –
– 10 µA
– 2 mA
Instantaneous On–State Voltage
V_T I_TM = 30A_(Peak), Pulse Width ≤ 1ms,
Duty Cycle ≤ 2%
– 1.7 2.0 V
Gate Trigger Current (Continuous DC)
Gate Trigger Voltage (Continuous DC)
I_GT V_D = 12V, R_L = 30Ω
V_GT V_D = 12V, R_L = 30Ω
– 8 15 mA
– 0.9 1.5 V
Holding Current
Gate Controlled Turn–On Time
Circuit Commutated Turn–Off Time
Critical Rate–of–Rise of Off–State
Voltage
I_H
t_gt
t_q
dv/dt
Gate Open, V_D = 12V, I_T = 150mA
V_D = Rated V_DRM, I_TM = 2A, I_GR = 80mA
V_D = V_DRM, I_TM = 2A, Pulse Width = 50µs,
dv/dt = 200V/µs, di/dt = 10A/µs,
T_C = +75°C
V_D = Rated V_DRM, Exponential Rise,
T_C = +100°C
– 10 20 mA
– 1.6 – µs
– 25 – µs
– 100 – V/µs
.147 (3.75)
Dia Max
.420 (10.67)
Max
Anode
.110 (2.79)
.500
(12.7)
Max
.070 (1.78) Max
Cathode
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Gate
Anode