NTE5452 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate

Electrical Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Peak Off–State Current
Maximum On–State Voltage
DC Holding Current
DC Gate–Trigger Current
DC Gate–Trigger Voltage
Total Gate Controlled
Turn–On Time
I²t for Fusing Reference
I_RRM V_RRM = Max, V_DRXM = Max,
–
I_DRXM ^{TC = +100°C, RG–K = 1kΩ}
–
V_TM T_C = +25°C, I_T = 4A (Peak)
–
I_HOLD T_C = +25°C
–
I_GT V_D = 6VDC, R_L = 100Ω, T_C = +25°C –
V_GT V_D = 6VDC, R_L = 100Ω, T_C = +25°C –
t_gt T_C = +25°C
–
I²t > 1.5msoc
–
– 100 µA
– 100 µA
– 2.2 V
– 3 mA
50 200 µA
– 0.8 V
1.2 – µs
– 0.5 A²sec
Critical rate of Applied
Forward Voltage
dv/dt R_G–K = 1kΩ, T_C = +100°C
(critical)
– 8 – V/µs
.380 (9.56)
A
.500
(12.7)
1.200
(30.48)
Ref
.300
(7.62)
.180 (4.57)
.132 (3.35) Dia
.325
(9.52)
.070 (1.78) x 45°
Chamf
.050 (1.27)
.380
(9.65)
Min
K AG
.100 (2.54)
.100 (2.54)