NTE5437 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Controlled Rectifier (SCR) 8 Amp

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Max Unit
On–State Voltage
On–State Threshold Voltage
On–State Slope Resistance
Gate Trigger Current
Gate Trigger Voltage
Holding Current
Latching Current
Critical Rate of Voltage Rise
Critical Rate of Current Rise
Gate Controlled Delay Time
Commutated Turn–Off Time
V_T
V_T(TO)
r_T
I_GT
V_GT
I_H
I_L
dv/dt
di/dt
t_gd
t_q
I_T = 16A, T_J = +25°C
– 1.95 V
T_J = +125°C
– 1.05 V
T_J = +125°C
– 65 mΩ
V_D = 7V
– 200 µA
V_D = 7V
– 2.0 V
R_GK = 1kΩ
– 10 mA
R_GK = 1kΩ
– 20 mA
V_D = .67 x V_DRM, R_GK = 1kΩ, T_J = +125°C
5
– V/µs
I_G = 10mA, di_G/dt = 0.1A/µs, T_J = +125°C
100 – A/µs
I_G = 10mA, di_G/dt = 0.1A/µs
– 500 ns
T_C = +85°C, V_D = .67 x V_DRM, V_R = 35V, I_T = 5.1A – 100 µs
.147 (3.75)
Dia Max
.420 (10.67)
Max
Anode
.110 (2.79)
.500
(12.7)
Max
.070 (1.78) Max
Cathode
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Gate
Anode