NTE5400 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate

Electrical Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Peak Off–State Current
I_RRM V_RRM = Max, V_DRXM = Max,
–
I_DRXM ^{TC = +100°C, RG–K = 1kΩ}
–
Maximum On–State Voltage V_TM T_C = +25°C, I_T = 1.2A (Peak)
–
DC Holding Current
I_HOLD T_C = +25°C
–
DC Gate–Trigger Current
I_GT V_D = 6VDC, R_L = 100Ω, T_C = +25°C –
DC Gate–Trigger Voltage
V_GT V_D = 6VDC, R_L = 100Ω, T_C = +25°C –
I²t for Fusing Reference
I²t > 1.5msoc
–
– 50 µA
– 50 µA
– 1.7 V
– 5 mA
50 200 µA
– 0.8 V
– 0.15 A²sec
Critical Rate of Applied
Forward Voltage
dv/dt T_C = +100°C
(critical)
– 5 – V/µs
.210
(5.33)
Max
.135 (3.45) Min
Seating
Plane
.500
(12.7)
Min
.021 (.445) Dia Max
.100 (2.54)
KG A
.050 (1.27)
.105 (2.67) Max
.205 (5.2) Max
.165 (4.2) Max
.105 (2.67) Max