NTE53 Datasheet, PDF (2/3 Pages) NTE Electronics – Silicon NPN Transistor High Voltage, High Speed Switch

Electrical Charactetristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Second Breakdown
V_CEO(sus)
V_CEX(sus)
I_CEV
I_CER
I_EBO
I_C = 100mA, I_B = 0
I_C = 8A, V_clamp = 450V, T_C = +100°C
I_C = 15A, V_clamp = 300V, T_C = +100°C
V_CEV = 850V, V_BE(off) = 1.5V
V_CEV = 850V, V_BE(off) = 1.5V,
T_C = +100°C
V_CE = 850V, R_BE = 50Ω, T_C = +100°C
V_EB = 9V, I_C = 0
Second Breakdown Collector
Current with Base Forward Bias
I_S/b V_CE = 100V, t = 1.0s (non–repetitive)
ON Characteristics (Note 2)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Dynamic Characteristics
h_FE
V_CE(sat)
V_BE(sat)
V_CE = 2V, I_C = 5A
V_CE = 2V, I_C = 10A
I_C = 10A, I_B = 2A
I_C = 10A, I_B = 2A, T_C = +100°C
I_C = 15A, I_B = 3A
I_C = 10A, I_B = 2A
I_C = 10A, I_B = 2A, T_C = +100°C
Current Gain–Bandwidth Product
f_T
Output Capacitance
C_ob
Switching Characteristics (Resistive Load)
V_CE = 10V, I_C = 500mA, f = 1MHz
V_CB = 10V, I_E = 0, f = 1MHz
Delay Time
Rise Time
t_d
V_CC = 250V, I_C = 10A, I_B1 = I_B2 =2A,
t_r
t_p = 300µs, Duty Cycle ≤ 2%
Storage Time
t_s
Fall Time
t_f
Switching Characteristics (Inductive Load, Clamped)
Storage Time
Fall Time
Storage Time
Fall Time
t_sv
I_C = 10A peak, V_clamp = 450V, I_B1 = 2A,
t_fi
V_BE(off) = 5V
t_sv
I_C = 10A peak, V_clamp = 450V, I_B1 = 2A,
t_fi
V_BE(off) = 5V, T_J = +100°C
Note 2. Pulse test: Pulse Width = 300µs, Duty Cycle ≤ 2%.
Min Typ Max Unit
400 –
450 –
300 –
––
––
––
––
–V
–V
–V
1.0 mA
4.0 mA
5.0 mA
1.0 mA
0.2 –
–A
12 – 60
6 – 30
– – 1.5 V
– – 2.5 V
– – 5.0 V
– – 1.6 V
– – 1.6 V
6 – 28 MHz
125 – 500 pF
– – 0.05 µs
– – 1.0 µs
– – 4.0 µs
– – 0.7 µs
– 2.0 – µs
0.09 –
– µs
– – 5.0 µs
– – 1.5 µs