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NTE491T Datasheet, PDF (2/2 Pages) NTE Electronics – N-Ch, Enhancement Mode High Speed Switch
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static Characteristics
Drain- Source Breakdown Voltage
Gate Threshold Voltage
Gate- Body Leakage Current
Zero - Gate- Voltage Drain Current
ON - State Drain Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
V(BR)DSS VGS = 0, ID = 100µA
60 -
-
V
VGS(Th) ID = 1mA, VDS = VGS
0.8 - 2.5 V
IGSS VGS = 15V, VDS = 0
-
- 100 nA
IDSS VDS = 48V, VGS = 0
-
- 10 µA
VDS = 48V, VGS = 0, TJ = +125°C
-
- 500 mA
Id(on) VGS = 10V, VDS = 10V, Note 1
750 -
- mA
rDS(on) VGS = 10V, ID = 500mA
-
- 5.0 Ω
VGS = 10V, ID = 500mA, TJ = +125°C -
- 6.0 Ω
VGS = 5V, ID = 200mA
7.5 Ω
gfs VDS = 10V, ID = 500mA
100 -
- mS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
Ciss
Coss
Crss
VDS = 25V, VGS = 0V, f = 1MHZ
-
- 60 pF
-
- 25 pF
-
-
5 pF
Turn - On Time
Turn - Off Time
tON VDD = 15V, RL = 23Ω, ID = 600mA,
-
- 10 ns
tOFF VGEN = 10V, RG = 25Ω
-
- 10 ns
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 2. Switching time is essentially independent of operating temperature.
.200 (5.08)
.180 (4.57)
.100 (2.54)
SGD
.180
(4.57)
.594
(15.09)
.018 (0.46)
.050 (1.27)
.015 (0.38)
.050 (1.27)
.050 (1.27)
.140
(3.55)
.090 (2.28) R