NTE49 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Complementary Transistors General Purpose, High Voltage Amp, Driver

Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
ON Characteristics (Note 2)
V_(BR)CEO I_C = 1mA, I_B = 0
V_(BR)EBO I_E = 100µA, I_C = 0
I_CBO V_CB = 40V, I_E = 0
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
Small–Signal Characteristics
h_FE
V_CE(sat)
V_BE(on)
I_C = 50mA, V_CE = 1V
I_C = 250mA, V_CE = 1V
I_C = 500mA, V_CE = 1V
I_C = 250mA, I_B = 10mA
I_C = 250mA, I_B = 25mA
I_C = 250mA, V_CE = 5V
Current Gain–Bandwidth Product
f_T I_C = 250mA, V_CE = 5V,
f = 100MHz, Note 1
Output Capacitance
C_ob V_CB = 10V, I_E = 0, f = 100kHz
Min Typ Max Unit
100 – – V
4––V
– – 100 nA
80 125 –
60 100 –
– 55 –
– 0.18 0.4 V
– 0.1 – V
– 0.74 1.2 V
50 150 – MHz
– 6 12 pF
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.380 (9.56)
C
.500
(12.7)
1.200
(30.48)
Ref
.300
(7.62)
.180 (4.57)
.132 (3.35) Dia
.325
(9.52)
.070 (1.78) x 45°
Chamf
.050 (1.27)
.400
(10.16)
Min
E BC
.100 (2.54)
.100 (2.54)