NTE484 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Output for Mobile Use, PO = 25W @ 947MHz

Electrical Characteristic (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Dynamic
Output Power
Power Gain
Impedance
Output Capacitance
P_O V_CE = 12.5V, f = 836MHz
P_G V_CE = 12.5V, f = 836MHz
Z_s V_CE = 12.5V, P_O= 25W, f = 836MHz
Z_cl
C_ob V_CB = 12.5V, I_E = 0, f = 1MHz
25
–
–W
5
–
– dB
– 4.9– j5.8 –
Ω
– 1.4– j3.5 –
Ω
–
–
65 pF
.960
(24.38)
Max
.725 (18.42)
B
C
.325 (8.28) Max
.195 (4.97) Max
.130 (3.3) Dia
.380 (5.72) Dia Max
E
B
.225 (5.72) Max
.285
(7.25)
Max
.180
(4.57)
Max
.730 (18.54)
.960 (24.38) Max