NTE46 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor Darlington, General Purpose Amplifier, Preamp, Driver

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
Small–Signal Characteristics
h_FE
V_CE(sat)
V_BE(on)
I_C = 10mA, V_CE = 5V
I_C = 100mA, V_CE = 5V
I_C = 10mA, I_B = 0.01mA
I_C = 100mA, I_B = 0.1mA
I_C = 100mA, V_CE = 5V
10,000 – –
10,000 – –
– 0.7 1.2 V
– 0.8 1.5 V
– 1.4 2.0 V
Current Gain–Bandwidth Product
f_T I_C = 10mA, V_CE = 5V,
f = 100MHz, Note 2
125 200 – MHz
Output Capacitance
C_obo V_CB = 10V, I_E = 0, f = 100kHz –
5.0 8.0 pF
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
Note 2. f_T = h_fe  f_test
.135 (3.45) Min
.210
(5.33)
Max
C
B
.500
(12.7)
Min
E
Seating Plane
.021 (.445) Dia Max
.100 (2.54)
.105 (2.67) Max
.205 (5.2) Max
EBC
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max