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NTE390 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Complementary Transistors General Purpose
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Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 30mA, IB = 0, Note 2
Collector–Emitter Cutoff Current
ICEO VCE = 60V, IB = 0
ICES VCE = 100V, VEB = 0
Emitter–Base Cutoff Current
IEBO VEB = 5V, IC = 0
ON Characteristics (Note 2)
100 – – V
– – 0.7 mA
– – 0.4 mA
– – 1 mA
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(on)
IC = 1A, VCE = 4V
IC = 3A, VCE = 4V
IC = 3A, IB = 0.3A
IC = 10A, IB = 2.5A
IC = 3A, VCE = 4V
IC = 10A, VCE = 4V
40 – –
20 – 100
––1V
––4V
– – 1.6 V
– – 3.0 V
Small–Signal Current Gain
Current–Gain Bandwidth Product
hfe IC = 0.5A, VCE = 10V, f = 1kHz 20 –
fT IC = 0.5A, VCE = 10V,
f = 1MHz, Note 3
3–
–
– MHz
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.
Note 3. fT = |hfe|  ftest
.600
(15.24)
C
.060 (1.52)
.173 (4.4)
.156
(3.96)
Dia.
BCE
.550
(13.97) .430
(10.92)
.500
(12.7)
Min
.055 (1.4)
.216 (5.45)
.015 (0.39)
NOTE: Dotted line indicates that
case may have square corners