NTE389 Datasheet, PDF(2/2 Page) NTE Electronics – Silicon NPN Transistor Horizontal Output

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NTE389 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor Horizontal Output

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Electrical Characteristics: (TC = +25Â°C unless otherwise specified)

Parameter

Symbol

Test Conditions

OFF Characteristics (Note 1)

CollectorâEmitter Sustaining Voltage VCEO(sus) IC = 50mA, IB = 0

Collector Cutoff Current

ICES VCE = 1500V, VBE = 0

Emitter Cutoff Current

IEBO VBE = 5V, IC = 0

ON Characteristics (Note 1)

CollectorâEmitter Saturation Voltage

BaseâEmitter Saturation Voltage

Dynamic Characteristics

VCE(sat)

VBE(sat)

IC = 3A, IB = 1.2A

Current Gain â Bandwidth Product

Output Capacitance

Switching Characteristics

IC = 0.1A, VCE = 5V, ftest = 1MHz

Cob VCB = 10V, IE = 0, f = 0.1MHz

Fall Time

IC = 3A, IB1 = 1.2A, LB = 8ÂµH

Min Typ Max Unit

750 â

ââ

âV

1.0 mA

â â 5.0 V

â â 1.5 V

â 4 â MHz

â 90 â pF

â 0.5 1.0 Âµs

Note 1. Pulse Test: Pulse Width â¤ 300Âµs, Duty Cycle = 2%.

.350 (8.89)

.135 (3.45) Max

.875 (22.2)

Dia Max

Seating

Plane

.312 (7.93) Min

.040 (1.02)

Emitter

1.187 (30.16)

.215 (5.45)

.430

(10.92)

.665

(16.9)

.156 (3.96) Dia

(2 Holes)

.188 (4.8) R Max

Base

.525 (13.35) R Max

Collector/Case