NTE388 Datasheet, PDF(2/2 Page) NTE Electronics – Silicon Complementary Transistors General Purpose High Power Audio, Disk Head Positioner for Linear Applications

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NTE388 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Complementary Transistors General Purpose High Power Audio, Disk Head Positioner for Linear Applications

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Electrical Characteristics: (TC = +25Â°C unless otherwise specified)

Parameter

Symbol

Test Conditions

OFF Characteristics

CollectorâEmitter Sustaining Voltage

Collector Cutoff Current

Emitter Cutoff Current

Second Breakdown

VCEO(sus) IC = 100mA, IB = 0, Note 3

ICEX VCE = 250V, VBE(off) = 1.5V

ICEO VCE = 200V, IB = 0

IEBO VEB = 5V, IC = 0

Second Breakdown Collector Current

with Base Forward Bias

ON Characteristics

IS/b VCE = 50V, t = 0.5s (nonârepetitive)

VCE = 80V, t = 0.5s (nonârepetitive)

DC Current Gain

CollectorâEmitter Saturation Voltage

BaseâEmitter On Voltage

Dynamic Characteristics

hFE

VCE(sat)

VBE(on)

VCE = 4V, IC = 8A

VCE = 4V, IC = 16A

IC = 8A, IB = 800mA

IC = 16A, IB = 3.2A

VCE = 4V, IC = 8A

Current GainâBandwidth Product

Output Capacitance

VCE = 10V, IC = 1A, ftest = 1MHz

Cob VCB = 10V, IE = 0, ftest = 1MHz

Note 3. Pulse Test: Pulse Width = 300Âµs, Duty Cycle â¤ 2%.

Min Typ Max Unit

250 â â V

â â 250 ÂµA

â â 500 ÂµA

5 â â ÂµA

2 â â ÂµA

15 â 60

5ââ

â â 1.4 V

â â 4.0 V

â â 2.2 V

4 â â MHz

â â 500 pF

.350 (8.89)

.135 (3.45) Max

.875 (22.2)

Dia Max

Seating

Plane

.312 (7.93) Min

.040 (1.02)

Emitter

.215 (5.45)

.430

(10.92)

1.187

(30.16)

.665

(16.9)

.156 (3.96) Dia

(2 Holes)

.188 (4.8) R Max

Base

.525 (13.35) R Max

Collector/Case