NTE386 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor Audio Power Amp, Switch

Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 2)
V_CEO(sus) I_C = 100mA, I_B = 0
I_CEV V_CEV = 800V, V_EB(off) = 1.5V
I_CER V_CE = 800V, R_BE = 50Ω, T_C = +100°C
I_EBO V_BE = 6V, I_C = 0
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Dynamic Characteristics
h_FE
V_CE(sat)
V_BE(sat)
V_CE = 5V, I_C = 5A
I_C = 10A, I_B = 2A
I_C = 20A, I_B = 6.7A
I_C = 10A, I_B = 2A
Output Capacitance
C_cb V_CB = 10V, I_E = 0, f_test = 1kHz
Switching Characteristics (Resistive Load)
Dealy Time
Rise Time
Storage Time
Fall Time
t_d
V_CC = 250V, I_C = 10A, I_B1 = 2A,
t_r
V_BE(off) = 5V, t_p = 10µs,
Duty Cycle ≤ 2%
t_s
t_f
Note 2. Pulse Test: Pulse Width = 300ms, Duty Cycle ≤ 2%.
Min Typ Max Unit
500 – – V
– – 0.25 mA
– – 5.0 mA
– – 1.0 mA
10 – 60
– – 1.8 V
– – 5.0 V
– – 1.8 V
125 – 500 pF
– 0.02 0.1 µs
– 0.3 0.7 µs
– 1.6 4.0 µs
– 0.3 0.7 µs
.350 (8.89)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
.040 (1.02)
Emitter
.215 (5.45)
.430
(10.92)
1.187
(30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case