NTE385 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor Audio Power Amp, Switch

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 2)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Dynamic Characteristics
h_FE
V_CE(sat)
V_BE(sat)
V_CE = 5V, I_C = 10A
I_C = 10A, I_B = 2A
I_C = 10A, I_B = 2A, T_C = +100°C
I_C = 8A, I_B = 1.6A
I_C = 8A, I_B = 1.6A, T_C = +100°C
I_C = 10A, I_B = 2A
I_C = 10A, I_B = 2A, T_C = +100°C
8––
– – 1.5 V
– – 2.0 V
– – 1.5 V
– – 2.0 V
– – 1.6 V
– – 1.6 V
Output Capacitance
C_ob V_CB = 10V, I_E = 0, f_test = 1kHz
Switching Characteristics (Resistive Load)
– – 350 pF
Delay Time
Rise Time
Storage Time
Fall Time
t_d
V_CC = 300V, I_C = 10A, I_B = 2A,
t_r
t_p = 30µs, Duty Cycle = 2%,
V_BE(off) = 5V
t_s
t_f
Switching Characteristics (Inductive Load, Clamped)
Storage Time
Fall Time
Storage Time
Crossover Time
Fall Time
t_sv
I_C = 10A, I_B1 = 2A, T_C = +25°C
t_fi
t_sv
I_C = 10A, I_B1 = 2A, T_C = +100°C
t_c
t_fi
– 0.1 0.2 µs
– 0.4 0.7 µs
– 1.3 2.0 µs
– 0.2 0.4 µs
– 1.3 – µs
– 0.06 – µs
– 1.5 2.5 µs
– 0.3 0.6 µs
– 0.17 0.35 µs
Note 2. Pulse test: Pulse Width = 300µs, Duty Cycle ≤ 2%, V_cl = 300V, V_BE(off) = 5V, L_C = 180µH.
.350 (8.89)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
COLLECTOR
BASE
EMITTER
.312 (7.93) Min
.040 (1.02)
Emitter
.215 (5.45)
.430
(10.92)
1.187
(30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case