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NTE379 Datasheet, PDF (2/3 Pages) NTE Electronics – Silicon NPN Transistor Power Amp, High Voltage, Switch
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Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 2)
VCEO(sus) IC = 10mA, IB = 0
ICEV VCEV = 700V, VBE(off) = 1.5V
VCEV = 700V, VBE(off) = 1.5V,
TC = +100°C
IEBO VEB = 9V, IC = 0
400 –
–
–
–
–
–
–
–
V
1 mA
5 mA
1 mA
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(sat)
IC = 5A, VCE = 5V
IC = 8A, VCE = 5V
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
IC = 12A, IB = 3A
IC = 8A, IB = 1.6A, TC = +100°C
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
IC = 8A, IB = 1.6A, TC = +100°C
8
– 40
6
– 30
–
– 1.0 V
–
– 1.5 V
–
– 3.0 V
–
– 2.0 V
–
– 1.2 V
–
– 1.6 V
–
– 1.5 V
Current Gain–Bandwidth Product
Output Capacitance
Switching Characteristics
fT
IC = 500mA, VCE = 10V, f = 1MHz
Cob VCB = 10V, IE = 0, f = 0.1MHz
4
–
– MHz
– 180 – pF
Resistive Load
Delay Time
Rise Time
Storage Tme
Fall Time
Inductive Load, Clamped
td
tr
VCC = 125V, IC = 8A,
ts
IB1 = IB2 = 1.6A, tp = 25µs,
Duty Cycle ≤ 1%
tf
– 0.06 0.1 µs
– 0.45 1.0 µs
– 1.3 3.0 µs
– 0.2 0.7 µs
Voltage Storage Time
Crossover Time
tsv
IC = 8A, Vclamp = 300V, IB1 = 1.6A,
– 0.92 2.3 µs
tc
VBE(off) = 5V, TC = +100°C
– 0.12 0.7 µs
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%.
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