NTE351 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Amp, Driver

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Dynamic Characteristics
Output Capacitance
C_ob V_CB = 15V, I_E = 0, f = 0.1MHz
Functional Tests (V_CC = 12.5V unless otherwise specified)
Common–Emitter Amplifier
Power Gain
G_PE P_out = 25W, f = 175MHz
– 110 130 pF
6.2 –
– dB
Collector Efficiency
η
P_out = 25W, f = 175MHz
65 –
–%
1.040 (26.4) Max
.520 (13.2)
C
.230
(5.84)
E
E
.100 (2.54)
B
.385 (9.8)
Dia
.005 (0.15)
8–32–NC–3A
Wrench Flat
.168 (4.27)
.750
(19.05)