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NTE350 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Amp, Driver | |||
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Electrical Characteristics (Contâd): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Dynamic Characteristics
Output Capacitance
Cob VCB = 15V, IE = 0, f = 0.1MHz
Functional Tests (VCC = 12.5V unless otherwise specified)
â 70 85 pF
CommonâEmitter Amplifier
Power Gain
GPE Pout = 15W, f = 175MHz
6.3 â
â dB
Collector Efficiency
η
Pout = 15W, f = 175MHz
60 â
â%
1.040 (26.4) Max
.520 (13.2)
C
.230
(5.84)
E
E
.100 (2.54)
B
.385 (9.8)
Dia
.005 (0.15)
8â32âNCâ3A
Wrench Flat
.168 (4.27)
.750
(19.05)
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