NTE329 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Amp, CB

Electrical Characteristics (Cont’d): (T_A = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Functional Test
Common–Emitter Amplifier Power Gain G_PE P_OUT = 3.5W, V_CC = 12.5V, f = 27MHz 10 – – dB
Collector Efficiency
η
P_OUT = 3.5W, V_CC = 12.5V, f = 27MHz, 62.5 70.0 – %
Note 3
Percent Up–Modulation
– f = 27MHz, Note 2
– 85 – %
Parallel Equivalent Input Resistance
Parallel Equivalent Input Capacitance
Parallel Equivalent Output Capaciatnce
R_in P_OUT = 3.5W, V_CC = 12.5V, f = 27MHz
C_in P_OUT = 3.5W, V_CC = 12.5V, f = 27MHz
C_out P_OUT = 3.5W, V_CC = 12.5V, f = 27MHz
– 21 – Ω
– 900 – pF
– 200 – pF
Note 2. η = R_F P_OUT
100
(V_CC) (I_C)
Note 3. Percentage Up–Modulation is measured by setting the Carrier Power (P_C) to 3.5 Watts with
V_CC = 12.5Vdc and noting the power input. The peak envelope power (PEP) is noted after
doubling the original power input to simulate driver modulation (at a 25% duty cycle for ther-
mal considerations) and raising the V_CC to 25Vdc (to simulate the modulating voltage). Per-
centage Up–Modulation is then determined by the relation:
Percentage Up–Modulation = (PEP) 1/2_–1
100
P_C
.260
(6.6)
Max
.500
(12.7)
Min
.370 (9.39) Dia Max
.355 (9.03) Dia Max
Emitter
.018 (0.45)
Base
Collector/Case
45°
.031 (.793)